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Chin. Opt. Lett.
 Home  List of Issues    Issue 04 , Vol. 06 , 2008    Study on nitridation processes of \beta-Ga2O3 single crystal


Study on nitridation processes of \beta-Ga2O3 single crystal
Xing Li1, Changtai Xia1, Xiaoli He2, Guangqing Pei1, Jungang Zhang3, Jun Xu1
1 [Shanghai Institute of Optics and Fine Mechanics], Chinese Academy of Sciences, Shanghai 201800
2 [Key Laboratory of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostructures], Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
3 [GE (China) Research and Development Center Company Limited,] Shanghai 201203

Chin. Opt. Lett., 2008, 06(04): pp.282-285-4

DOI:
Topic:Other areas of optics
Keywords(OCIS Code): 350.3850  240.6700  250.0250  290.5860  250.5230  

Abstract
Nitridated \beta-Ga2O3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of \beta-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 oC, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.

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Received:2007/10/10
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Get Citation: Xing Li, Changtai Xia, Xiaoli He, Guangqing Pei, Jungang Zhang, Jun Xu, "Study on nitridation processes of \beta-Ga2O3 single crystal," Chin. Opt. Lett. 06(04), 282-285-4(2008)

Note: This work was supported by the National Natural Science Foundation of China under Grant No.50672105, and the Hundred Talents Program of Chinese Academy of Sciences. C. Xia is the author to whom the correspondence should be addressed, his e-mail address is xia_ct@siom.ac.cn.



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