2018-12-19 Welcome guest,  Sign In  |  Sign Up
Chin. Opt. Lett.
 Home  List of Issues    Issue 11 , Vol. 10 , 2012    10.3788/COL201210.110401

Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer
Shuqin Zhang1;2, Liang Chen2, Songlin Zhuang1
1 Institute of Optical Electronic Information and Computer Engineering, [University of Shanghai for Science and Technology], Shanghai 200093, China
2 Institute of Optoelectronics Technology, [China Jiliang University], Hangzhou 310018, China

Chin. Opt. Lett., 2012, 10(11): pp.110401

Keywords(OCIS Code): 040.7190  160.1890  230.0040  260.7210  

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1?xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1?xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 View PDF (267 KB)


Posted online:2012/9/14

Get Citation: Shuqin Zhang, Liang Chen, Songlin Zhuang, "Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer," Chin. Opt. Lett. 10(11), 110401(2012)

Note: This work was supported by the General Administration for Quality Supervision of China (No. 2008QK328) and the Zhejiang Provincial Natural Science Foundation of China (No. Y5090150).


1. G. Faraci, A. R. Pennisi, F. Gozzo, S. La Rosa, and G. Margaritondo, Phys. Rev. B 53, 3987 (1996).

2. J. J. Zou, B. K. Chang, Y. J. Zhang, and Z. Yang, Appl. Opt. 49, 2561 (2010).

3. L. Chen, Y. S. Qian, and B. K. Chang, Appl. Opt. 50, 7035 (2011).

4. W. Wang, Y. Huang, X. Duan, Q. Yan, X. Ren, S. Cai, J. Guo, and H. Huang, Chin. Opt. Lett. 9, 111301 (2011).

5. Z. Yang, B. K. Chang, J. J. Zou, J. J. Qiao, P. Gao, Y. P. Zeng, and H. Li, Appl. Opt. 46, 7035 (2007).

6. L. Chen, Y. S. Qian, Y. J. Zhang, and B. K. Chang, Opt. Commun. 284, 4520 (2011).

7. J. Zhao, B. K. Chang, Y. J. Xiong, and Y. J. Zhang, Chin. Phys. B 20, 47801 (2011).

8. Y. J. Zhang, J. Niu, J. Zhao, J. J. Zou, B. K. Chang, F. Shi, and H. C. Cheng, J. Appl. Phys. 108, 093108 (2010).

9. J. Tousek and D. Kindl, J. Appl. Phys. 89, 460 (2001).

10. Y. T. Cheng, Physica E 14, 313 (2002).

11. M. A. Reshchikov, M. Foussekis, and A. A. Baski, J. Appl. Phys. 107, 113535 (2010).

12. Y. Zhi, J. J. Zou, and B. K. Chang, Acta. Phys. Sin. 59, 4290 (2010).

Save this article's abstract as
Copyright©2018 Chinese Optics Letters 沪ICP备15018463号-7 公安备案沪公网安备 31011402005522号