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Chin. Opt. Lett.
 Home  List of Issues    Issue 11 , Vol. 10 , 2012    10.3788/COL201210.110401


Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer
Shuqin Zhang1;2, Liang Chen2, Songlin Zhuang1
1 Institute of Optical Electronic Information and Computer Engineering, [University of Shanghai for Science and Technology], Shanghai 200093, China
2 Institute of Optoelectronics Technology, [China Jiliang University], Hangzhou 310018, China

Chin. Opt. Lett., 2012, 10(11): pp.110401

DOI:10.3788/COL201210.110401
Topic:Detectors
Keywords(OCIS Code): 040.7190  160.1890  230.0040  260.7210  

Abstract
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1?xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1?xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Received:2012/3/26
Accepted:2012/5/17
Posted online:2012/9/14

Get Citation: Shuqin Zhang, Liang Chen, Songlin Zhuang, "Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer," Chin. Opt. Lett. 10(11), 110401(2012)

Note: This work was supported by the General Administration for Quality Supervision of China (No. 2008QK328) and the Zhejiang Provincial Natural Science Foundation of China (No. Y5090150).



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