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Chin. Opt. Lett.
 Home  List of Issues    Issue 06 , Vol. 16 , 2018    10.3788/COL201816.060401


Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection
Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, and Zhihong Feng
National Key Laboratory of ASIC, [Hebei Semiconductor Research Institute], Shijiazhuang 050051, China

Chin. Opt. Lett., 2018, 16(06): pp.060401

DOI:10.3788/COL201816.060401
Topic:Detectors
Keywords(OCIS Code): 040.1345  040.7190  040.6070  230.5160  

Abstract
In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNx instead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5×105 and low dark current density of 0.88 μA/cm2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.

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Received:2018/3/8
Accepted:2018/4/16
Posted online:2018/5/30

Get Citation: Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, and Zhihong Feng, "Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection," Chin. Opt. Lett. 16(06), 060401(2018)

Note: This work was supported by the National Natural Science Foundation of China (Nos. 61604137 and 61674130).



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